InAs/GaAs Quantum Dot Solar Cell
نویسندگان
چکیده
In this work Silvaco TCAD have been used to model quantum dot solar cell. It was found that the addition of InAs QD(quantum dot) in the intrinsic layer of hetero-structure InGaP/GaAs p-i-n solar cell extends the absorption range of the solar cell, thereby giving rise to efficiency enhancement of the QD solar cell by 3.8851 % it was also observed that the fill factor increases from 83.2724% to 88.0538 % as a result of addition of QD. Finally, the simulated results are compared and validated with the published experimental findings.
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